 | Fuel - 1975 - 236 pages
...Schottky barrier solar cell is described which consists of a layer of wide band gap semiconductor material on which a very thin film of semi-transparent metal is deposited to form the barrier The layer of the wide band gap semiconductor material is on top of a layer of narrower... | |
 | Fuel - 1974 - 452 pages
...Schottky barrier solar cell is described which consists of a layer of wide band gap semiconductor material on which a very thin film of semi-transparent metal is deposited to form the barrier The layer of the wide band gap semiconductor material is on top of a layer of narrower... | |
 | Fuel - 1978 - 524 pages
...layer of wide band gap semiconductor material on which a very thin film of semrtransparent metal was deposited to form a Schottky barrier The layer of...gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly... | |
 | Fuel - 1978 - 514 pages
...layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of...gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly... | |
 | Solar energy - 1978 - 630 pages
...Patent 4,053,918. 11 Oct 1977. Filed date 5 Aug 1974. 6p. A Sehottky barrier solar cell is disclosed, consisting of a layer of wide band gap semiconductor...film of semi-transparent metal is deposited to form a Sehottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower... | |
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Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is... 