Impurity Doping Processes in SiliconF.F.Y. Wang This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method. |
Contents
55 | |
Chapter 3 Source feed materials in ion beam technology | 147 |
Chapter 4 Growth of doped silicon layers by molecular beam epitaxy | 175 |
Chapter 5 Neutron transmutation doping of silicon | 217 |
Chapter 6 CVD doping of silicon | 259 |
Chapter 7 Concentration profiles of diffused dopants in silicon | 315 |
Chapter 8 Impurity profile of implanted ions in silicon | 443 |
639 | |
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Common terms and phrases
acceptor amorphous annealing antimony Appl approximately arsenic atoms autodoping band gap base beam boron buried layer calculated carrier cathode channel cm_3 coefficient Cold cathode collision concentration profile crystal curve density depletion device distribution donor dopant dopant concentration doping doping level dose effect electrical activity Electrochemical Society electron emitter diffusion emitter-push energy enhancement epitaxial equation experimental factor function gallium gas phase Gaussian growth IEEE impurity diffusion integrated circuits interstitial intrinsic ion implantation ionized irradiation lattice Lett mask material measured method n-type neutron obtained oxide p-type parameters phosphorus phosphorus diffusion Phys push-out ratio reactor region sample self-diffusion Semiconductors sheet resistivity shown in fig silicon surface SiO2 Solid St spreading resistance substrate surface concentration susceptor tail target technique temperature thermal threshold voltage tion transistor vacancy values vapor versus voltage wafer