Impurity Doping Processes in Silicon

Front Cover
F.F.Y. Wang
Elsevier, Dec 2, 2012 - Technology & Engineering - 652 pages
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
 

Contents

Chapter 2 Ion implantation processes in silicon
55
Chapter 3 Source feed materials in ion beam technology
147
Chapter 4 Growth of doped silicon layers by molecular beam epitaxy
175
Chapter 5 Neutron transmutation doping of silicon
217
Chapter 6 CVD doping of silicon
259
Chapter 7 Concentration profiles of diffused dopants in silicon
315
Chapter 8 Impurity profile of implanted ions in silicon
443
Subject index
639
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