Impurity Doping Processes in SiliconFranklin F. Y. Wang This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method. |
Contents
Contents | 3 |
DOUBLEDIFFUSION PROCESSES IN SILICON | 4 |
Interactions between dopants during double diffusion | 10 |
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acceptor amorphous annealing Appl arsenic atoms autodoping base diffusion beam boron buried layer calculated cathode channel cm³ coefficient Cold cathode concentration profile crystal curve density deposition rate depth device dislocations distribution donor dopant dopant concentration doping doping level dose double diffusion effect electrically active Electrochemical Society Electron emitter diffusion emitter-push energy epitaxial equation equilibrium experimental factor float zone flux function gallium gas phase IEEE impurity concentration integrated circuits interstitial ion implantation ionized irradiation Jones and Willoughby lattice Lett mask material measured method n-type neutron obtained oxide p-n junction parameters partial pressure phosphorus phosphorus diffusion Phys push-out range ratio reactor region sample Semiconductors sheet resistivity shown in fig SiO2 Solid St spreading resistance substrate surface concentration susceptor tail target technique temperature thermal tion transistor vacancy values vapor voltage wafer