Impurity Doping Processes in Silicon
Franklin F. Y. Wang
North-Holland Publishing Company, Jan 1, 1981 - Semiconductor doping - 643 pages
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
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DOUBLEDIFFUSION PROCESSES IN SILICON
Interactions between dopants during double diffusion
41 other sections not shown
acceptor amorphous annealing Appl arsenic atoms autodoping base diffusion beam boron buried layer calculated cathode channel coefficient Cold cathodes concentration profile crystal curve density deposition rate depth device dislocations distribution donor dopant dopant concentration doping level dose double diffusion effect electrical activity Electrochemical Society Electron emitter diffusion emitter-push energy epitaxial equation equilibrium experimental factor float zone flux function gallium gas phase IEEE integrated circuits interstitial ion implantation ion source ionized irradiation Jones and Willoughby lattice Lett lifetime mask material measured method obtained oxide p-n junction p-type parameters partial pressure phosphorus phosphorus diffusion Phys pressure produce push-out range ratio reactor region sample Semiconductors sheet resistivity shown in fig Solid St substrate surface concentration susceptor tail target technique temperature thermal thermal neutron threshold voltage tion transistor vacancy vacuum values vapor voltage wafer